Room temperature photo-induced, Eu-doped IGZO transparent thin films fabricated using sol–gel method
نویسندگان
چکیده
Red-emitting Eu-doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol–gel method under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500°C for 1 h. Structure, morphology, composition, and optical properties of the materials were examined using X-ray diffraction analysis, scanning electron microscope, X-ray photoelectron spectroscopy, and photoluminescence, respectively.
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